Characterization of Si Epitaxial Layer grown on highly-doped Si substrate by using THz reflection spectroscopy

Abstract

Properties of Si epitaxial layer with thinner thickness than 6um and doping concentration of 10(14) to 10(16)/cm(3), grown on highly doped Si substrate, were analyzed by time domain THz reflection spectroscopy. For improving the measurement resolutions, photo-excitation technique was applied on this spectroscopy. And we could obtain the epilayer properties with resolutions of 0.1um in thickness and 10(15)/cm(3) in doping concentration.