Characterization of Si Epitaxial Layer grown on highly-doped Si substrate by using THz reflection spectroscopy
Authors
Nam-Young Lee ; SeungJae Oh ; ChungTae Kim ; JiJoong Hong
Citation
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Vol.2022 : 22092621, 2022-08
Journal Title
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
Issue Date
2022-08
Abstract
Properties of Si epitaxial layer with thinner thickness than 6um and doping concentration of1014 to 1016/cm3, grown on highly doped Si substrate, were analyzed by time domain THz reflection spectroscopy. For improving the measurement resolutions, photo-excitation technique was applied on this spectroscopy. And we could obtain the epilayer properties with resolutions of 0.1um in thickness and 1015/cm3 in doping concentration.