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Characterization of Si Epitaxial Layer grown on highly-doped Si substrate by using THz reflection spectroscopy

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dc.contributor.author오승재-
dc.date.accessioned2023-04-07T01:13:20Z-
dc.date.available2023-04-07T01:13:20Z-
dc.date.issued2022-08-
dc.identifier.urihttps://ir.ymlib.yonsei.ac.kr/handle/22282913/193823-
dc.description.abstractProperties of Si epitaxial layer with thinner thickness than 6um and doping concentration of1014 to 1016/cm3, grown on highly doped Si substrate, were analyzed by time domain THz reflection spectroscopy. For improving the measurement resolutions, photo-excitation technique was applied on this spectroscopy. And we could obtain the epilayer properties with resolutions of 0.1um in thickness and 1015/cm3 in doping concentration.-
dc.description.statementOfResponsibilityrestriction-
dc.relation.isPartOfInternational Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)-
dc.rightsCC BY-NC-ND 2.0 KR-
dc.titleCharacterization of Si Epitaxial Layer grown on highly-doped Si substrate by using THz reflection spectroscopy-
dc.typeArticle-
dc.contributor.collegeCollege of Medicine (의과대학)-
dc.contributor.departmentResearch Institute (부설연구소)-
dc.contributor.googleauthorNam-Young Lee-
dc.contributor.googleauthorSeungJae Oh-
dc.contributor.googleauthorChungTae Kim-
dc.contributor.googleauthorJiJoong Hong-
dc.identifier.doi10.1109/IRMMW-THz50927.2022.9896099-
dc.contributor.localIdA02383-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9896099-
dc.contributor.alternativeNameOh, Seung Jae-
dc.contributor.affiliatedAuthor오승재-
dc.citation.volume2022-
dc.citation.startPage22092621-
dc.identifier.bibliographicCitationInternational Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Vol.2022 : 22092621, 2022-08-
Appears in Collections:
1. College of Medicine (의과대학) > Research Institute (부설연구소) > 1. Journal Papers

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