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Characterization of Si Epitaxial Layer grown on highly-doped Si substrate by using THz reflection spectroscopy
DC Field | Value | Language |
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dc.contributor.author | 오승재 | - |
dc.date.accessioned | 2023-04-07T01:13:20Z | - |
dc.date.available | 2023-04-07T01:13:20Z | - |
dc.date.issued | 2022-08 | - |
dc.identifier.uri | https://ir.ymlib.yonsei.ac.kr/handle/22282913/193823 | - |
dc.description.abstract | Properties of Si epitaxial layer with thinner thickness than 6um and doping concentration of1014 to 1016/cm3, grown on highly doped Si substrate, were analyzed by time domain THz reflection spectroscopy. For improving the measurement resolutions, photo-excitation technique was applied on this spectroscopy. And we could obtain the epilayer properties with resolutions of 0.1um in thickness and 1015/cm3 in doping concentration. | - |
dc.description.statementOfResponsibility | restriction | - |
dc.relation.isPartOf | International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) | - |
dc.rights | CC BY-NC-ND 2.0 KR | - |
dc.title | Characterization of Si Epitaxial Layer grown on highly-doped Si substrate by using THz reflection spectroscopy | - |
dc.type | Article | - |
dc.contributor.college | College of Medicine (의과대학) | - |
dc.contributor.department | Research Institute (부설연구소) | - |
dc.contributor.googleauthor | Nam-Young Lee | - |
dc.contributor.googleauthor | SeungJae Oh | - |
dc.contributor.googleauthor | ChungTae Kim | - |
dc.contributor.googleauthor | JiJoong Hong | - |
dc.identifier.doi | 10.1109/IRMMW-THz50927.2022.9896099 | - |
dc.contributor.localId | A02383 | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9896099 | - |
dc.contributor.alternativeName | Oh, Seung Jae | - |
dc.contributor.affiliatedAuthor | 오승재 | - |
dc.citation.volume | 2022 | - |
dc.citation.startPage | 22092621 | - |
dc.identifier.bibliographicCitation | International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Vol.2022 : 22092621, 2022-08 | - |
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