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D-band heterodyne integrated imager in a 65-nm CMOS technology

Authors
 Daekeun Yoon  ;  Namhyung Kim  ;  Kiryong Song  ;  Jungsoo Kim  ;  Seung Jae Oh  ;  Jae-Sung Rieh 
Citation
 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, Vol.25(3) : 196-198, 2015 
Journal Title
 IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 
ISSN
 1531-1309 
Issue Date
2015
Keywords
CMOS ; CMOS integrated circuit ; imaging ; receivers
Abstract
A D-band heterodyne integrated imager, consisting of a mixer, an oscillator, an IF amplifier, and an IF detector, has been developed in a 65-nm CMOS technology. A measured responsivity of 720 kV/W and noise equivalent power (NEP) of 0.9pW/Hz were obtained at 125 GHz. A total dc power of 74 mW was dissipated. The chip size 1200 * 800 is including contact pads and an input balun. A D-band image was acquired with the imager serving as a detector. A significant resolution enhancement was demonstrated with a near-field imaging achieved by a metal plate with a pinhole in the imaging setup.
Full Text
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7017460
DOI
2015
Appears in Collections:
5. Research Institutes (연구소) > Institute for Medical Convergence (연의-생공연 메디컬융합연구소) > 1. Journal Papers
Yonsei Authors
Oh, Seung Jae(오승재)
URI
https://ir.ymlib.yonsei.ac.kr/handle/22282913/139754
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