Deposition of ZnO films grown by pulsed laser deposition for film bulk acoustic resonators

Abstract

The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by a pulsed laser deposition (PLD) technique using a Nd:YAG laser. We have investigated the c-axis orientation and the electrical resistivity of the ZnO films. These results show the possibility of FBAR devices using PLD.