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Terahertz Emission and Ultrafast Carrier Dynamics of Ar-Ion Implanted Cu(In,Ga)Se2 Thin Films

Authors
 Chul Kang  ;  Gyuseok Lee  ;  Woo-Jung Lee  ;  Dae-Hyung Cho  ;  Inhee Maeng  ;  Yong-Duck Chung  ;  Chul-Sik Kee 
Citation
 CRYSTALS, Vol.11(4) : 411, 2021-04 
Journal Title
CRYSTALS
Issue Date
2021-04
Keywords
terahertz ; ultrafast ; CIGS ; carrier dynamics
Abstract
We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier–carrier scattering lifetimes and decrease the bandgap transition lifetime.
DOI
10.3390/cryst11040411
Appears in Collections:
1. College of Medicine (의과대학) > Research Institute (부설연구소) > 1. Journal Papers
Yonsei Authors
Maeng, In hee(맹인희)
URI
https://ir.ymlib.yonsei.ac.kr/handle/22282913/190965
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