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MAX-Phase Films Overcome Scaling Limitations to the Resistivity of Metal Thin Films

Authors
 Joung Eun Yoo  ;  Ju Young Sung  ;  Jin Ha Hwang  ;  Inhee Maeng  ;  Seung-Jae Oh  ;  Inho Lee  ;  Ji Hoon Shim  ;  Sung Dug Kim  ;  Du-Seop Yoon  ;  Seo Young Jang  ;  Young Jae Kang  ;  Sang Woon Lee 
Citation
 ACS APPLIED MATERIALS & INTERFACES, Vol.13(51) : 61809-61817, 2021-12 
Journal Title
ACS APPLIED MATERIALS & INTERFACES
ISSN
 1944-8244 
Issue Date
2021-12
Keywords
MAX phase ; metal thin film ; resistivity ; scattering ; size effect
Abstract
Metal thin films have been widely used as conductors in semiconductor devices for several decades. However, the resistivity of metal thin films such as Cu and TiN increases substantially (>1000%) as they become thinner (<10 nm) when using high-density integration to improve device performance. In this study, the resistivities of MAX-phase V2AlC films grown on sapphire substrates exhibited a significantly weaker dependence on the film thickness than conventional metal films that resulted in a resistivity increase of only 30%, as the V2AlC film thickness decreased from approximately 45 to 5 nm. The resistivity was almost identical for film thicknesses of 10-50 nm. The small change in the resistivity of V2AlC films with decreasing film thickness originated from the highly ordered crystalline quality and a small electron mean free path (11-13.6 nm). Thus, MAX-phase thin films have great potential for advanced metal technology applications to overcome the current scaling limitations of semiconductor devices.
Full Text
https://pubs.acs.org/doi/10.1021/acsami.1c20516
DOI
10.1021/acsami.1c20516
Appears in Collections:
1. College of Medicine (의과대학) > Research Institute (부설연구소) > 1. Journal Papers
Yonsei Authors
Maeng, In hee(맹인희)
Oh, Seung Jae(오승재)
URI
https://ir.ymlib.yonsei.ac.kr/handle/22282913/190671
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