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Terahertz Characteristics of InGaAs with Periodic InAlAs Insertion Layers

Authors
 Dong Woo Park  ;  Jin Soo Kim  ;  Young Bin Ji  ;  Seung Jae Oh  ;  Tae-In Jeon  ;  Sam Kyu Noh 
Citation
 APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, Vol.27(6) : 173-177, 2018 
Journal Title
 APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY 
ISSN
 2288-6559 
Issue Date
2018
Keywords
Terahertz ; Molecular beam epitaxy ; Low-temperature growth ; Indium gallium arsenide ; Multiple quantum well
Abstract
We presented terahertz (THz) generation and detection characteristics of an InGaAs epilayer with periodic InAlAs insertion layers (InGaAs-PIL). The peak-to-peak current signal (PPCS) from a THz transmitter with the InGaAs-PIL was three times higher than that of a simple InGaAs epilayer. Moreover, the detection properties of a THz receiver with the low-temperature grown (LT) InGaAs-PIL showed more than twenty-five times higher than that of the LT-InGaAs epilayer. The PPCS of the LT-InGaAs-PIL was significantly improved with increasing the periods of the InAlAs insertion layer.
Files in This Item:
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DOI
10.5757/ASCT.2018.27.6.173
Appears in Collections:
5. Research Institutes (연구소) > Institute for Medical Convergence (연의-생공연 메디컬융합연구소) > 1. Journal Papers
Yonsei Authors
Oh, Seung Jae(오승재)
URI
https://ir.ymlib.yonsei.ac.kr/handle/22282913/167285
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