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High-field nonlinear conductivities of n- and p-type GaAs thin films in the terahertz region

Authors
 Hee Jun Shin  ;  Dong Woo Park  ;  Seung Jae Oh  ;  Jun Oh Kim  ;  Hyeongmun Kim  ;  Sam Kyu Noh  ;  Joo-Hiuk Son 
Citation
 CURRENT APPLIED PHYSICS, Vol.16(7) : 793-798, 2016 
Journal Title
 CURRENT APPLIED PHYSICS 
ISSN
 1567-1739 
Issue Date
2016
MeSH
High field ; Terahertz ; Nonlinear conductivity ; GaAs
Abstract
We investigated high-field terahertz (THz) responses and the nonlinear conductivities of n- and p-type GaAs thin films in the THz region. As the THz pulse intensity was increased to 59 μJ/cm2, the THz transmission of the n-type GaAs thin film was significantly increased, more than that of the p-type film. This result is correlated with the conductivity of the electronic system caused by scattering processes. Intervalley scattering was dominant in n-type GaAs, whereas hot?cold hole interactions and intervalence band transitions were the main factors reducing the conductivity in p-type GaAs. In addition, we extracted the frequency-domain conductivity of the n- and p-type GaAs thin films and used the Drude?Smith model to explain non-Drude-like behavior due to high-field excitation.
Full Text
http://www.sciencedirect.com/science/article/pii/S1567173916300906
DOI
10.1016/j.cap.2016.04.017
Appears in Collections:
5. Research Institutes (연구소) > Institute for Medical Convergence (연의-생공연 메디컬융합연구소) > 1. Journal Papers
Yonsei Authors
Oh, Seung Jae(오승재)
URI
https://ir.ymlib.yonsei.ac.kr/handle/22282913/151936
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