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Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization

Authors
 Byung Du Ahn  ;  Hyun Soo Shin  ;  Dong Lim Kim  ;  Seung Min Lee  ;  Jin-Seong Park  ;  Gun Hee Kim  ;  Hyun Jae Kim 
Citation
 JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.51(1) : 15601, 2012-01 
Journal Title
 JAPANESE JOURNAL OF APPLIED PHYSICS 
ISSN
 0021-4922 
Issue Date
2012-01
Abstract
This paper reports the crystallization of amorphous InGaZnO (a-IGZO) films using solid-phase crystallization and discusses the mechanisms responsible for degradation of device performance after crystallization. The field-effect mobility (µFE) and subthreshold gate swing (S) value of the nanocrystallite embedded-IGZO thin-film transistors (TFTs) were significantly degraded to 3.12 cm2 V-1 s-1 and 1.26 V/decade, respectively, compared to those (13.72 cm2 V-1 s-1 and 0.38 V/decade) for the a-IGZO TFTs. The decreased µFE is explained based on indium deficiency by diffusion of its atoms in the channel layer and grain-boundary trapping of mobile carriers. The predominant mechanism of increasing S value has been attributed to increased interface and grain-boundary trapping.
Full Text
https://iopscience.iop.org/article/10.1143/JJAP.51.015601
DOI
10.1143/JJAP.51.015601
Appears in Collections:
1. College of Medicine (의과대학) > Dept. of Otorhinolaryngology (이비인후과학교실) > 1. Journal Papers
Yonsei Authors
Shin, Hyun Soo(신현수)
URI
https://ir.ymlib.yonsei.ac.kr/handle/22282913/178480
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