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Characterization of Flexible Amorphous Silicon Thin-Film Transistor-Based Detectors with Positive-Intrinsic-Negative Diode in Radiography

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dc.contributor.author김규석-
dc.date.accessioned2022-12-22T03:07:36Z-
dc.date.available2022-12-22T03:07:36Z-
dc.date.issued2022-08-
dc.identifier.urihttps://ir.ymlib.yonsei.ac.kr/handle/22282913/191802-
dc.description.abstractLow-dose exposure and work convenience are required for mobile X-ray systems during the COVID-19 pandemic. We investigated a novel X-ray detector (FXRD-4343FAW, VIEWORKS, Anyang, Korea) composed of a thin-film transistor based on amorphous silicon with a flexible plastic substrate. This detector is composed of a thallium-doped cesium iodide scintillator with a pixel size of 99 μm, pixel matrix of 4316 × 4316, and weight of 2.95 kg. The proposed detector has the advantages of high-noise characteristics and low weight, which provide patients and workers with an advantage in terms of the dose and work efficiency, respectively. We performed a quantitative evaluation and an experiment to demonstrate its viability. The modulation transfer function, noise power spectrum, and detective quantum efficiency were identified using the proposed and comparative detectors, according to the International Electrotechnical Commission protocol. Additionally, the contrast-to-noise ratio and coefficient of variation were investigated using a human-like phantom. Our results indicate that the proposed detector efficiently increases the image performance in terms of noise characteristics. The detailed performance evaluation demonstrated that the outcomes of the use of the proposed detector confirmed the viability of mobile X-ray devices that require low doses. Consequently, the novel FXRD-4343FAW X-ray detector is expected to improve the image quality and work convenience in extended radiography.-
dc.description.statementOfResponsibilityopen-
dc.languageEnglish-
dc.publisherMDPI AG-
dc.relation.isPartOfDIAGNOSTICS-
dc.rightsCC BY-NC-ND 2.0 KR-
dc.titleCharacterization of Flexible Amorphous Silicon Thin-Film Transistor-Based Detectors with Positive-Intrinsic-Negative Diode in Radiography-
dc.typeArticle-
dc.contributor.collegeCollege of Medicine (의과대학)-
dc.contributor.departmentOthers-
dc.contributor.googleauthorBongju Han-
dc.contributor.googleauthorMinji Park-
dc.contributor.googleauthorKyuseok Kim-
dc.contributor.googleauthorYoungjin Lee-
dc.identifier.doi10.3390/diagnostics12092103-
dc.contributor.localIdA06206-
dc.relation.journalcodeJ03798-
dc.identifier.eissn2075-4418-
dc.identifier.pmid36140503-
dc.subject.keyworddigital radiography-
dc.subject.keywordflexible amorphous silicon-
dc.subject.keywordperformance evaluation of an X-ray imaging system-
dc.subject.keywordthin-film transistor detector-
dc.contributor.alternativeNameKim, Kyuseok-
dc.contributor.affiliatedAuthor김규석-
dc.citation.volume12-
dc.citation.number9-
dc.citation.startPage2103-
dc.identifier.bibliographicCitationDIAGNOSTICS, Vol.12(9) : 2103, 2022-08-
Appears in Collections:
1. College of Medicine (의과대학) > Dept. of Neurosurgery (신경외과학교실) > 1. Journal Papers

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